| PART |
Description |
Maker |
| LBSS138DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS84WT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
| LBSS84LT1G LBSS84LT3G |
Power MOSFET F30 mAmps, 50 Volts
|
Leshan Radio Company
|
| MGSF1P02EL |
Power MOSFET 750 mAmps, 20 Volts
|
ON Semiconductor
|
| LBSS138WT1G |
Power MOSFET 200 mAmps, 50 Volts
|
Leshan Radio Company
|
| MGSF1N02LT1 MGSF1N02LT3 |
Power MOSFET 750 mAmps, 20 Volts N?Channel SOT?3
|
TY Semiconductor Co., Ltd
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| MGSF1P02LT1 MGSF1P02LT3 MGSF1P02L MGSF1P02LT3G |
Power MOSFET 750 mAmps, 20 Volts P-Channel(750mA20V，P沟道增强型功率MOS场效应管)
|
ONSEMI[ON Semiconductor]
|
| NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
| BSS138LT1/D BSS138LT1-D |
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| BSS84LT1/D BSS84LT1-D |
Power MOSFET 130 mAmps, 50 Volts P-Channel SOT-23
Power MOSFET 130 mAmps50 Volts
|
ON Semiconductor
|
| MMBF170LT1 MMBF170LT1G MMBF170LT3 MMBF170LT3G |
Power MOSFET 500 mAmps, 60 Volts
Power MOSFET 500 mA, 60 V
|
ONSEMI[ON Semiconductor]
|
